tsm 020n03pq56 30v n-channel mosfet 1/6 version: a14 pdfn56 key parameter performance parameter value unit v ds 30 v r ds(on) (max) v gs = 10v 2 m ? v gs = 4.5v 3 q g 82 nc features low on-resistance low input capacitance low gate charge block diagram n-channel mosfet ordering information part no. package packing TSM020N03PQ56 rlg pdfn56 2.5kpcs / 13 reel note: g denotes for halogen- and antimony-free as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total b r + cl) and <1000ppm antimony compounds . absolute maximum ratings (t c =25 o c unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 30 v gate-source voltage v gs 20 v continuous drain current (note 3) t c =25c i d 130 a t a =25c 38 drain current-pulsed (note 1) i dm 500 a single pulse avalanche energy , l=0.1mh e as 151 mj maximum power dissipation (note 2) t c =25c p d 83 w t a =25c 3.6 storage temperature range t stg -55 to +150 c operating junction temperature range t j -55 to +150 c thermal performance parameter symbol limit unit thermal resistance - junction to case r ? jc 1.5 o c/w thermal resistance - junction to ambient r ? ja 35 o c/w pin definition : 1. source 8. drain 2. source 7. drain 3. source 6. drain 4. gate 5. drain
tsm 020n03pq56 30v n-channel mosfet 2/6 version: a14 electrical specifications (t j =25 o c unless otherwise noted) parameter conditions symbol min typ max unit static drain-source breakdown voltage v gs = 0v, i d = 250a bv dss 30 -- -- v drain-source on-state resistance v gs = 10v, i d = 30a r ds(on) -- 1.5 2 m ? v gs = 4.5v, i d = 15a -- 2.3 3 gate threshold voltage v ds = v gs , i d = 250a v gs(th) 1.2 -- 2.5 v zero gate voltage drain current v ds = 24v, v gs = 0v i dss -- -- 1 a gate body leakage v gs = 20v, v ds = 0v i gss -- -- 100 na dynamic total gate charge v dd = 15v, i d = 30a, v gs = 10v q g -- 82 -- nc gate-source charge q gs -- 24 -- gate-drain charge q gd -- 5 -- input capacitance v ds = 15v, v gs = 0v, f = 1.0mhz c iss -- 4222 -- pf output capacitance c oss -- 889 -- reverse transfer capacitance c rss -- 398 -- switching turn-on delay time v gs = 10v, v ds = 15v, r g = 3 ? , i d = 30a t d(on) -- 22 -- ns turn-on rise time t r -- 7 -- turn-off delay time t d(off) -- 100 -- turn-off fall time t f -- 18 -- drain-source diode characteristics and maximum rati ng drain-source diode forward voltage v gs =0v, i s =30a v sd -- -- 1.3 v reverse recovery time i s = 30a, di/dt = 100a/s t fr -- 32 -- ns reverse recovery charge q rr -- 120 -- nc notes: 1. pulse test: pulse width 300 s, duty cycle 2%. 2. r ? ja is the sum of the junction-to-case and case-to-amb ient thermal resistances. the case thermal referenc e is defined at the solder mounting surface of the dr ain pins. r ? ja is guaranteed by design while r ? ca is determined by the users board design. r ? ja shown below for single device operation on fr-4 pc b in still air. 3. the maximum current rating is limited by package .
tsm 020n03pq56 30v n-channel mosfet 3/6 version: a14 electrical characteristics curves output characteristics gate threshold voltage gate source on resistance drain-source on resistance drain-source on-resistance source-drain diode forward voltage i ds =250 a
tsm 020n03pq56 30v n-channel mosfet 4/6 version: a14 electrical characteristics curves power derating drain current vs. junction temperature safe operation area transient thermal impedance capacitance gate charge
tsm 020n03pq56 30v n-channel mosfet 5/6 version: a14 pdfn56 mechanical drawing unit: millimeters marking diagram y = year code m = month code for halogen free product ( o =jan, p =feb, q =mar, r =apl, s =may, t =jun, u =jul, v =aug, w =sep, x =oct, y =nov, z =dec) l = lot code
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